Title
The indirect thermographic measurement of the transistor die temperature made through the IR window
Authors
[ 1 ] Instytut Elektroenergetyki, Wydział Inżynierii Środowiska i Energetyki, Politechnika Poznańska | [ 2 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Automatyki, Robotyki i Elektrotechniki, Politechnika Poznańska | [ P ] employee
Scientific discipline (Law 2.0)
[2.2] Automation, electronics, electrical engineering and space technologies
Year of publication
2026
Published in
Article type
scientific article
Publication language
english
Keywords
EN
- finite elements method
- indirect thermographic measurement
- thermal modelling
- semiconductor transistor
Abstract
EN This article discusses the indirect thermographic temperature measurement of a transistor manufactured using silicon carbide technology. The C2M0280120D transistor was selected for the study. The transistor (understood as the die encapsulated in the case) was placed inside an additional enclosure, similar to how an electronic device would be mounted in a box. In order to enable the thermographic measurement of the temperature of the transistor case, the part located directly above the die, an IR window was installed in the additional enclosure. The glass used for the IR window was made of CaF₂. The study aimed to verify whether the indirect (approximated) thermographic temperature measurement of a transistor operating inside an electronic device - through an IR window – is feasible. The main part of the work involved performing an indirect thermographic measurement of the transistor die temperature through the IR window. This measurement consists of two stages: the thermographic measurement of the transistor case temperature, and the determination of the die temperature based on the established relationship between the die and the case temperatures. In the final part of the study, the uncertainty of the indirect (approximated) die temperature measurement (performed through the IR window) was determined. The highest calculated uncertainty was ±10.97 K.
Date of online publication
13.09.2025
Pages (from - to)
106149-1 - 106149-16
Comments
Article number: 106149
Ministry points / journal
100
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