Title
In situ conductance of Fe/Si and Fe/Ge multilayers
Authors
[ 1 ] Instytut Fizyki, Wydział Fizyki Technicznej, Politechnika Poznańska | [ P ] employee
Year of publication
2008
Published in
Article type
scientific article
Publication language
english
Abstract
EN In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe–Si and Fe–Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe–Si (or Fe–Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
Pages (from - to)
657 - 662
Open Access Mode
publisher's website
Open Access Text Version
final published version
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