Title
Comments on the article “Transport properties of Sn-doped InSb thin films and application to Hall element”[J. Crystal Growth 251 (2003) 560]
Authors
[ 1 ] Instytut Fizyki, Wydział Fizyki Technicznej, Politechnika Poznańska | [ P ] employee
Year of publication
2004
Published in
Article type
scientific article
Publication language
english
Pages (from - to)
600 - 602
Impact Factor
1,707
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