Comments on the article “Transport properties of Sn-doped InSb thin films and application to Hall element”[J. Crystal Growth 251 (2003) 560]

Maciej Oszwałdowski

Scientific Information System of the Poznań University of Technology

PL EN

Main page / Publications / Comments on the article “Transport properties of Sn-doped InSb thin films and application to Hall element”[J. Crystal Growth 251 (2003) 560]

Submit a comment

Article

Download BibTeX

Title

Comments on the article “Transport properties of Sn-doped InSb thin films and application to Hall element”[J. Crystal Growth 251 (2003) 560]

Authors

Maciej Oszwałdowski (WFT) ^{[ 1 ][ P ]}

^{[ 1 ]} Instytut Fizyki, Wydział Fizyki Technicznej, Politechnika Poznańska | ^{[ P ]} employee

Year of publication

2004

Published in

Journal of Crystal Growth

Journal year: 2004 | Journal volume: vol. 260 | Journal number: iss. 3-4

Article type

scientific article

Publication language

english

Pages (from - to)

600 - 602

Impact Factor

1,707

System created by Poznań University of Technology and Poznan Supercomputing and Networking Center

Log in through eKonto to add to SIS