Silicon carbide based DC-DC converter – operating analysis
2016
artykuł naukowy
angielski
- DC\DC converter
- SiC MOSFETS
- high switching frequency
EN In this paper operating analysis of DC-DC converter is presented. Silicon Carbide based DC-DC converter is investigated. SiC power switches (i.e. MOSFETs and diodes) were used. Synchronous buck topology is applied for converter structure. The DC-DC converter mathematical model is also presented. The parameters of LC circuit were calculated using shown equations. Working conditions determine the values of output LC circuit (inductance and capacitance). The analysis of working conditions is presented for different switching frequencies. The size of passive components (LC) is compared for different operating points. Experimental tests results were presented. Waveforms of voltage and current signals were also shown.
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publiczny
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