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Chapter

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Title

Power Electronics Inverter with a Modified Sigma-Delta Modulator and an Output Stage Based on GaN E-HEMTs

Authors

[ 1 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Elektryczny, Politechnika Poznańska | [ P ] employee

Scientific discipline (Law 2.0)

[2.2] Automation, electronics and electrical engineering

Year of publication

2017

Chapter type

chapter in monograph

Publication language

english

Keywords
EN
  • converter control
  • gallium nitride transistor
  • PWM
  • sigma-delta modulator
Abstract

EN The chapter presents a conception of a power electronics inverter based on a modified sigma-delta modulator (SDM) being used in the inverter’s control block. The proposed modulator includes a comparator with dynamic hysteresis instead of a latched comparator, which is typically used in single-bit SDMs. Thanks to this feature, the resolution of the SDM output bit stream is, theoretically, unlimited. As a result, the value of the THD of an inverter output voltage (current) is much lower than that of a typical SDM solution. This benefit is not offset by an increase in the system’s complexity. Moreover, the control system is simpler than in the case of a conventional inverter. Due to the very high frequency of an SDM output bit stream, in a power stage of the inverter, the gallium-nitride (GaN)-based E-HEMTs (Enhancement mode High Speed Mobility Transistors) are implemented. However, in the case of a lower value of an inverter output power, an Si-based device is still the proper choice. In the chapter, the inverter control circuit basics, the results of simulation experiments and a possible practical arrangement of this one as a voltage-controlled voltage source (VCVS) are presented.

Pages (from - to)

327 - 338

DOI

10.1007/978-3-319-45735-2_13

URL

https://link.springer.com/chapter/10.1007/978-3-319-45735-2_13

Book

Advanced Control of Electrical Drives and Power Electronic Converters

Ministry points / chapter

20

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