SIS PUT | in press | 2024 | IEEE Electron Device Letters

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Main page / Journals / IEEE Electron Device Letters / 2024 / in press

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Journal: IEEE Electron Device Letters | Journal year: 2024

Number in press

1.

High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001) / Tymoteusz Ciuk, Corinne Nouvellon, Fabie Monteverde, Beata Stańczyk, Krystyna Przyborowska, Dariusz Czołak, Semir El-Ahmar (WIMiFT) // IEEE Electron Device Letters - 2024, in press

Scientific article 140 4,1

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