Title
High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001)
Authors
[ 1 ] Instytut Fizyki, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ P ] employee
Scientific discipline (Law 2.0)
Year of publication
2024
Published in
Article type
scientific article
Publication language
english
Keywords
EN
- Graphene
- SiC
- Hall effect sensor
Abstract
EN In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al2O3-passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity on-axis 4H-SiC(0001), pre-epitaxially modified with 5-keV hydrogen (H+) ions. The sensor operates between 305 K and 770 K, with a current-mode sensitivity of ~75 V/AT and thermal stability below 0.15 %/K ( ⩽ 0.03 %/K in a narrower range between 305 K and 700 K). It is a promising two-dimensional platform for high-temperature magnetic diagnostics and plasma control systems for modern tokamak fusion reactors.
Pages (from - to)
1957 - 1960
Ministry points / journal
140
Impact Factor
4,5
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