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Article

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Title

Ocena dokładności firmowego makromodelu tranzystora SiC-JFET

Authors

Title variant

EN Evaluation of accuracy of SiC-JFET macromodel

Year of publication

2018

Published in

Poznan University of Technology Academic Journals. Electrical Engineering

Journal year: 2018 | Journal number: Issue 95

Article type

scientific article

Publication language

polish

Keywords
PL
  • JFET
  • makromodel
  • węglik krzemu
Abstract

PL W pracy zaprezentowano wyniki weryfikacji eksperymentalnej makromodelu tranzystora JFET wykonanego z węglika krzemu o symbolu UJN1208K firmy United Silicon Carbide. Postać makromodelu jest dedykowana dla programu PSPICE i została udostępniona na stronie internetowej producenta. Oceniono dokładność makromodelu poprzez porównanie wybranych obliczonych i katalogowych charakterystyk statycznych oraz charakterystyk C(u) rozważanego tranzystora. Przeanalizowano wpływ temperatury otoczenia na wymienione charakterystyki tranzystora.

EN In the paper, the results of experimental verification of the macromodel of UJN1208K JFET transistor made of silicon carbide fabricated by United Silicon Carbide, are presented. The macromodel form dedicated for PSPICE program is available on the manufacturer's website. The accuracy of the macromodel have been evaluated by comparison of selected calculated and measured static characteristics and C-V characteristics of the considered transistor. The influence of ambient temperature on the characteristics of the transistor has been evaluated, as well.

Pages (from - to)

67 - 76

DOI

10.21008/j.1897-0737.2018.95.0007

Presented on

Computer Applications in Electrical Engineering 2018, 23-24.04.2018, Poznań, Polska

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public

Ministry points / journal

9

Ministry points / journal in years 2017-2021

9

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