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Article

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Title

Simulation studies on efficiency improvement in isolated full-bridge DC-DC converter using modern power semiconductors

Authors

Year of publication

2012

Published in

Poznan University of Technology Academic Journals. Electrical Engineering

Journal year: 2012 | Journal number: Issue 71

Article type

scientific article

Publication language

english

Keywords
EN
  • full-bridge DC-DC converter
  • semiconductor
  • MOSFET transistor
  • PSpice model
Abstract

EN Low-voltage high-current energy sources and energy storage devices such as solar panels, fuel cells, super capacitors and batteries deliver output voltage not exceeding several tens of volts. To meet the electric grid standards that voltage should be adjusted to the system DC Bus voltage of around 400 VDC- High efficiency high voltage gain step-up DC-DC converters ensure that interface. This paper presents simulation results of the isolated full-bridge DC-DC boost converter with voltage doubler. In order to achieve higher efficiency modem power MOSFETs with low channel resistance as well as silicon carbide (SiC) Schottky diodes were used. In presented circuit tenfold voltage gain and high conversion efficiency were achieved. Parametric and transient characteristics along with the features of converter simulation model will be described.

Pages (from - to)

49 - 55

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