Title
Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC
Authors
[ 1 ] Instytut Fizyki, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ P ] employee
Scientific discipline (Law 2.0)
Year of publication
2021
Published in
Article type
scientific article
Publication language
english
Pages (from - to)
17 - 24
Ministry points / journal
70
Ministry points / journal in years 2017-2021
70
Impact Factor
2,856
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