Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1 1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: aqueous NH4F etching process of Si(111)

H. Kato; T. Taoka; S. Nishikata; G. Sazaki; T. Yamada; Ryszard Czajka; K. Nakajima; A. Kasuja; S. Suto

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Strona główna / Publikacje / Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1 1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: aqueous NH4F etching process of Si(111)

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Preparation of an ultraclean and atomically controlled hydrogen-terminated Si(111)-(1 1) surface revealed by high resolution electron energy loss spectroscopy, atomic force microscopy, and scanning tunneling microscopy: aqueous NH4F etching process of Si(111)

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