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Article

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Title

Mechanism of initial structure formation on highly doped n-Si(111)

Authors

[ 1 ] Instytut Inżynierii Materiałowej, Wydział Budowy Maszyn i Zarządzania, Politechnika Poznańska | [ P ] employee

Year of publication

2002

Published in

Journal of Electroanalytical Chemistry

Journal year: 2002 | Journal volume: vol. 527 | Journal number: iss. 1-2

Article type

scientific article

Publication language

english

Pages (from - to)

41 - 46

DOI

https://doi.org/10.1016/S0022-0728(02)00707-6

URL

https://www.sciencedirect.com/science/article/pii/S0022072802007076

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