ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
[ 1 ] Instytut Badań Materiałowych i Inżynierii Kwantowej, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ 2 ] Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ P ] pracownik | [ SzD ] doktorant ze Szkoły Doktorskiej
2023
artykuł naukowy
angielski
- ZnO
- MoS2
- graphene
- doping
- memristor
- resistive switching
- RRAM
EN Abstract In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM.
28.02.2023
416-1 - 416-21
Article number: 416
CC BY (uznanie autorstwa)
otwarte czasopismo
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w momencie opublikowania
70
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