Effect of surface preparation on PtSe2 crystal surface morphology
[ 1 ] Instytut Fizyki, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ SzD ] doktorant ze Szkoły Doktorskiej | [ P ] pracownik
2023
artykuł naukowy
angielski
- transition metal dichalcogenides
- PtSe2
- scanning tunneling microscopy
- surface preparation
EN Transition metal dichalcogenides, a new class of layered materials, have recently been deemed as an excellent material platform for the further development of microelectronics. Contrary to the general trend, which is geared toward layers, we focus our attention on basic research regarding bulk PtSe2. The justification for this approach is based on the fact that some research (e.g., on the impact of the doping process on the material’s properties) can be performed on the bulk crystal. We believe that the conclusions drawn from our approximation can be extrapolated to thin films and monolayers. In this paper, we present a morphological study of the influence of the surface preparation procedure on the PtSe2 substrate. We show that mechanical exfoliation is one possible way to achieve a clean PtSe2 surface. However, STM measurements revealed that this process is insufficient to achieve an atomically clean surface. Subsequent additional annealing under UHV conditions led to an improved surface morphology by reducing the number of mobile PtSe2 flakes as well as the density of small surface clusters. Finally, STM measurements show other interesting surface structures, such as cracks, bulges, and flakes with heights lower than the apparent height typical of a PtSe2 monolayer.
16.09.2022
122181-1 - 122181-6
Article Number: 122181
Czasopismo hybrydowe
100
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