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Article

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Title

ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

Authors

[ 1 ] Instytut Badań Materiałowych i Inżynierii Kwantowej, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ 2 ] Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ P ] employee | [ SzD ] doctoral school student

Scientific discipline (Law 2.0)

[2.8] Materials engineering

Year of publication

2023

Published in

Crystals

Journal year: 2023 | Journal volume: vol. 13 | Journal number: iss. 3

Article type

scientific article

Publication language

english

Keywords
EN
  • ZnO
  • MoS2
  • graphene
  • doping
  • memristor
  • resistive switching
  • RRAM
Abstract

EN Abstract In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM.

Date of online publication

28.02.2023

Pages (from - to)

416-1 - 416-21

DOI

10.3390/cryst13030416

URL

https://www.mdpi.com/2073-4352/13/3/416

Comments

Article number: 416

License type

CC BY (attribution alone)

Open Access Mode

open journal

Open Access Text Version

final published version

Date of Open Access to the publication

at the time of publication

Ministry points / journal

70

Impact Factor

2,7 [List 2022]

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