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Article

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Title

High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001)

Authors

[ 1 ] Instytut Fizyki, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ P ] employee

Scientific discipline (Law 2.0)

[2.8] Materials engineering

Year of publication

2024

Published in

IEEE Electron Device Letters

Journal year: 2024 | Journal volume: in press

Article type

scientific article

Publication language

english

Keywords
EN
  • Graphene
  • SiC
  • Hall effect sensor
DOI

10.1109/LED.2024.3436050

Ministry points / journal

140

Impact Factor

4,1 [List 2023]

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