Indirect thermographic die temperature measurement of a SiC-based semiconductor diode under the conditions of natural and forced convection
[ 1 ] Instytut Elektroenergetyki, Wydział Inżynierii Środowiska i Energetyki, Politechnika Poznańska | [ 2 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Automatyki, Robotyki i Elektrotechniki, Politechnika Poznańska | [ P ] pracownik
[2.2] Automatyka, elektronika, elektrotechnika i technologie kosmiczne
2024
artykuł naukowy
angielski
- finite elements method
- indirect thermographic measurement
- thermal modelling
- semiconductor diode
- Pt1000 sensor
EN Information about the die temperature of a semiconductor diode is important to the designer. The shape of the current-voltage characteristics of the semiconductor diode and its operating parameters depend on the value of this temperature. Semiconductor devices that conduct a high current can reach high die and case temperatures. This temperature can be determined by thermographic temperature measurement. The temperature value of these miconductor diode case will depend on the conditions underwhich it is operated. For many semiconductor devices, the temperature difference between the case and the die will depend onthe convection. Research work was carried out to determine the difference between the die temperature of the semiconductor diode made on the basis of SiC FFSH10120A and its case. The method of making a thermographic temperature measurement of the case of a semiconductor element has been presented and the place where this measurement should be made has been indicated. It was found that in the case of natural convection, the largest difference between the temperature of the semiconductor element and the temperature of its case was 40.1 K. For forced convection,the largest difference between these temperatures was 33.1 K for v= 0.75 m/s and 23.9 K for v = 1.5 m/s.
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