Spectroscopic study on the influence of post-processing annealing on ZnO films produced with a sol-gel method

Ewelina Nowak; Mirosław Szybowicz; Przemysław Sędzicki; Alicja Stachowiak; Daria Piechowiak; Marek Trzcinski; Wojciech Koczorowski; Beata Derkowska-Zielińska; Andrzej Miklaszewski; Edyta Chłopocka

doi:10.1016/j.tsf.2023.140154

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Title

Spectroscopic study on the influence of post-processing annealing on ZnO films produced with a sol-gel method

Authors

Ewelina Nowak (WIMiFT) ^{[ 1 ][ 2.8 ][ P ]}
Mirosław Szybowicz (WIMiFT) ^{[ 2 ][ 2.8 ][ P ]}
Przemysław Sędzicki
Alicja Stachowiak (WIMiFT) ^{[ 3 ][ P ]}
Daria Piechowiak (WIMiFT) ^{[ 4 ][ 2.8 ][ SzD ]}
Marek Trzcinski
Wojciech Koczorowski (WIMiFT) ^{[ 3 ][ 2.8 ][ P ]}
Beata Derkowska-Zielińska
Andrzej Miklaszewski (WIMiFT) ^{[ 4 ][ 2.8 ][ P ]}
Edyta Chłopocka (WIMiFT) ^{[ 1 ][ 2.8 ][ SzD ]}

^{[ 1 ]} Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | ^{[ 2 ]} Instytut Badań Materiałowych i Inżynierii Kwantowej, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | ^{[ 3 ]} Instytut Fizyki, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | ^{[ 4 ]} Instytut Inżynierii Materiałowej, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | ^{[ P ]} employee | ^{[ SzD ]} doctoral school student

Scientific discipline (Law 2.0)

[2.8] Materials engineering

Year of publication

2024

Published in

Thin Solid Films

Journal year: 2024 | Journal volume: vol. 788

Article type

scientific article

Publication language

english

Keywords

EN

Raman spectroscopy
X-ray diffraction
X-ray photoelectron spectroscopy Ultraviolet-visible spectroscopy
Photoluminescence
Sol-gel deposition
Zinc oxide

Abstract

EN Zinc oxide is still one of the most crucial wide bandgap semiconductors for electronics. It is highly used because of its ease of production, doping, and low cost. However, in the production of zinc oxide materials, it is necessary to consider the formation of native defects, which strongly influence the material's properties. Therefore, it is essential to understand the behavior in thin films during the annealing process. The presented work shows the appearance of oxygen and zinc vacancies during annealing at specific temperatures and times. Samples annealed in an oxygen-rich atmosphere change their structural and chemical properties. Specific defects may be detected using Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. In addition, energy bandgap, defects energy, and the thermal dependence of luminescence emission were analyzed as the primary indicators of the changes during the sintering.

Date of online publication

10.12.2023

Pages (from - to)

140154-1 - 140154-19

DOI

10.1016/j.tsf.2023.140154

URL

https://www.sciencedirect.com/science/article/abs/pii/S004060902300487X

Comments

Article Number: 140154

Ministry points / journal

70