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Title

Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation

Authors

[ 1 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Automatyki, Robotyki i Elektrotechniki, Politechnika Poznańska | [ 2 ] Instytut Elektroenergetyki, Wydział Inżynierii Środowiska i Energetyki, Politechnika Poznańska | [ P ] employee

Scientific discipline (Law 2.0)

[2.2] Automation, electronics, electrical engineering and space technologies
[2.10] Environmental engineering, mining and energy

Year of publication

2024

Published in

Sensors

Journal year: 2024 | Journal volume: vol. 24 | Journal number: iss. 19

Article type

scientific article

Publication language

english

Keywords
EN
  • thermography
  • C2M0280120D
  • transistor
  • switching
  • thermal modelling
  • solidworks
Abstract

EN This paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications. During the research, the pulse frequency was varied from 1 kHz to 800 kHz. The transistor case temperature was measured using a Flir E50 thermographic camera and a Pt1000 sensor. The transistor die temperature was determined based on the voltage drop on the body diode and the known characteristics between the voltage drop on the diode and the temperature of the die. The research was carried out in accordance with the presented measuring standards and maintaining the described conditions. The differences between the transistor case temperature and the transistor die temperature were also determined based on simulation work performed in Solidworks 2020 SP05. For this purpose, a three-dimensional model of the C2M0280120D transistor was created and the materials used in this model were selected; the methodology for selecting the model parameters is discussed. The largest recorded difference between the case temperature and the junction temperature was 27.3 °C. The use of a thermographic camera allows the transistor’s temperature to be determined without the risk of electric shock. As a result, it will be possible to control the C2M0280120D transistor in such a way so as not to damage it and to optimally select its operating point.

Pages (from - to)

6452-1 - 6452-21

DOI

10.3390/s24196452

URL

https://www.mdpi.com/1424-8220/24/19/6452

Comments

Article number: 6452

License type

CC BY (attribution alone)

Open Access Mode

open journal

Open Access Text Version

final published version

Full text of article

Download file

Access level to full text

public

Ministry points / journal

100

Impact Factor

3,4 [List 2023]

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