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Studies of temperature-dependent Raman spectra of thin PtSe2 layers on Al2O3 substrate


[ 1 ] Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ 2 ] Instytut Badań Materiałowych i Inżynierii Kwantowej, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ 3 ] Instytut Fizyki, Wydział Inżynierii Materiałowej i Fizyki Technicznej, Politechnika Poznańska | [ SzD ] doctoral school student | [ P ] employee

Scientific discipline (Law 2.0)

[2.8] Materials engineering

Year of publication


Published in

Materials Science and Engineering B

Journal year: 2023 | Journal volume: vol. 297

Article type

scientific article

Publication language


  • PtSe2
  • Raman spectroscopy
  • temperature-dependent Raman spectroscopy

EN The results of temperature-dependent Raman spectroscopy studies of thin layers of PtSe2 (1–10 monolayers) deposited on an Al2O3 substrate are disscused in this paper. A redshift of the vibrational Raman modes (Eg and A1g) is observed when the thickness of PtSe2 and temperature increase. The results allow for determining the thickness of the PtSe2 layer deposited on the Al2O3 substrate by analysing the Raman shift of the PtSe2 modes (Eg and A1g) and the screening effects on the surface vibration mode (A1g). The other original result is the determination of the stresses and doping effects in PtSe2 for the considered range of layer thicknesses by analyses of the correlative plot. Finally, the thermal dependences of the Raman spectra are discussed regarding Raman shifts and intensity. The atomic force microscopy measurements show the presence of residual contamination with surface densities varying between samples.

Date of online publication


Pages (from - to)

116728-1 - 116728-12





Article number: 116728

License type

Czasopismo hybrydowe

Ministry points / journal


Impact Factor

3,6 [List 2022]

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