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Article

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Title

Broadband power electronics controlled current source with analouge control section and output stage based on GaN transistors

Authors

[ 1 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Elektryczny, Politechnika Poznańska | [ P ] employee

Scientific discipline (Law 2.0)

[2.2] Automation, electronics and electrical engineering

Year of publication

2017

Published in

Poznan University of Technology Academic Journals. Electrical Engineering

Journal year: 2017 | Journal number: Issue 91

Article type

scientific article

Publication language

english

Keywords
EN
  • converter control
  • GaN transistor
  • interleaved technique
  • pulse modulation
Abstract

EN The paper presents the conception of the power electronics controlled current source based on the sigma–delta modulator (SDM). Due to very high frequency of the SDM output bit stream, in the power stage of inverter the gallium-nitride (GaN) transistors are used. In these circumstances even efficient DSPs are unable, due to limitation of its pass–band of the control path, to obtain right parameters of the output current regulator. So, the regulator is done in the fully analogue manner. As result of these the value of distortions of the inverter output current is much lower, compared to the typical, PWM based, solutions. This benefit is not paid significantly by increase in the system complexity. In work the converter operation basics and results of its simulation model studies are presented.

Pages (from - to)

55 - 61

DOI

10.21008/j.1897-0737.2017.91.0005

License type

CC BY (attribution alone)

Open Access Mode

open journal

Open Access Text Version

final published version

Date of Open Access to the publication

at the time of publication

Full text of article

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Access level to full text

public

Ministry points / journal

9

Ministry points / journal in years 2017-2021

9

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