Broadband power electronics controlled current source with analouge control section and output stage based on GaN transistors
[ 1 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Elektryczny, Politechnika Poznańska | [ P ] pracownik
2017
artykuł naukowy
angielski
- converter control
- GaN transistor
- interleaved technique
- pulse modulation
EN The paper presents the conception of the power electronics controlled current source based on the sigma–delta modulator (SDM). Due to very high frequency of the SDM output bit stream, in the power stage of inverter the gallium-nitride (GaN) transistors are used. In these circumstances even efficient DSPs are unable, due to limitation of its pass–band of the control path, to obtain right parameters of the output current regulator. So, the regulator is done in the fully analogue manner. As result of these the value of distortions of the inverter output current is much lower, compared to the typical, PWM based, solutions. This benefit is not paid significantly by increase in the system complexity. In work the converter operation basics and results of its simulation model studies are presented.
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