Indirect Thermographic Temperature Measurement of a Power-Rectifying Diode Die Based on a Heat Sink Thermogram

Krzysztof Dziarski; Arkadiusz Hulewicz; Łukasz Drużyński; Grzegorz Dombek

doi:10.3390/en16010332

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Title

Indirect Thermographic Temperature Measurement of a Power-Rectifying Diode Die Based on a Heat Sink Thermogram

Authors

Krzysztof Dziarski (WIŚiE) ^{[ 1 ][ 2.2 ][ P ]}
Arkadiusz Hulewicz (WARiE) ^{[ 2 ][ 2.2 ][ P ]}
Łukasz Drużyński (WIŚiE) ^{[ 1 ][ 2.10 ][ P ]}
Grzegorz Dombek (WIŚiE) ^{[ 1 ][ 2.10 ][ P ]}

^{[ 1 ]} Instytut Elektroenergetyki, Wydział Inżynierii Środowiska i Energetyki, Politechnika Poznańska | ^{[ 2 ]} Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Automatyki, Robotyki i Elektrotechniki, Politechnika Poznańska | ^{[ P ]} employee

Scientific discipline (Law 2.0)

[2.2] Automation, electronics, electrical engineering and space technology
[2.10] Environmental engineering, mining and energy

Year of publication

2023

Published in

Energies

Journal year: 2023 | Journal volume: vol. 16 | Journal number: iss. 1

Article type

scientific article

Publication language

english

Keywords

EN

thermography
indirect thermographic measurement
rectifying diode
thermal modeling
emissivity coefficient
convection coefficient
SolidWorks
diode die
heat sink

Abstract

EN This article concerns the indirect thermographic measurement of the junction temperature of a D00-250-10 semiconductor diode. Herein, we show how the temperature of the semiconductor junction was estimated on the basis of the heat sink temperature. We discuss the methodology of selecting the points for thermographic measurement of the heat sink temperature and the diode case. The method of thermographic measurement of the heat sink temperature and the used measurement system are described. The simulation method used to obtain the temperature of the semiconductor diode junction on the basis of the thermographic measurement of the heat sink temperature, as well as the method of determining the emissivity and convection coefficients, is presented. In order to facilitate the understanding of the discussed issues, the construction of the diode and heat sink used, the heat flow equation and the finite element method are described. As a result of the work carried out, the point where the diode casing temperature is closest to the junction temperature was indicated, as well as which fragments of the heat sink should be observed in order to correctly estimate the temperature of the semiconductor junction. The indirect measurement of the semiconductor junction temperature was carried out for different values of the power dissipated in the junction.

Pages (from - to)

332-1 - 332-25

DOI

10.3390/en16010332

URL

https://www.mdpi.com/1996-1073/16/1/332

Comments

article number: 332

License type

CC BY (attribution alone)

Open Access Mode

open journal