Methods of Measurement of Die Temperature of Semiconductor Elements: A Review
[ 1 ] Instytut Elektroenergetyki, Wydział Inżynierii Środowiska i Energetyki, Politechnika Poznańska | [ 2 ] Instytut Elektrotechniki i Elektroniki Przemysłowej, Wydział Automatyki, Robotyki i Elektrotechniki, Politechnika Poznańska | [ P ] employee
[2.2] Automation, electronics, electrical engineering and space technology
2023
scientific article
english
- current gain
- electrical resistance
- finite element method
- forward voltage
- Fourier law
- junction–case resistance
- liquid crystal
- semiconductor
- semiconductor die
- threshold voltage
- thermoreflectance
EN Monitoring the temperature of a semiconductor component allows for the prediction of potential failures, optimization of the selected cooling system, and extension of the useful life of the semiconductor component. There are many methods of measuring the crystal temperature of the semiconductor element referred to as a die. The resolution and accuracy of the measurements depend on the chosen method. This paper describes known methods for measuring and imaging the temperature distribution on the die surface of a semiconductor device. Relationships are also described that allow one to determine the die temperature on the basis of the case temperature. Current trends and directions of development for die temperature measurement methods are indicated.
08.03.2023
2559-1 - 2559-25
Article number: 2559
CC BY (attribution alone)
open journal
final published version
08.03.2023
at the time of publication
public
140
3